Trevor J. Thornton, Ph.D. (President and Founder)

Since graduating from Cambridge University (BA 1983, PhD 1987) Trevor Thornton has held post-doctoral appointments at the Cavendish Laboratory, Cambridge (1986-88) and Bell Communications Research in New Jersey (1988-1990). In 1990 he took up a lectureship in the Electrical Engineering Dept. of Imperial College in London University. In March 1998 he joined the faculty of the ASU Electrical Engineering Dept. From 1991-1998 he worked as a consultant for the Hitachi Cambridge Laboratory and was a Visiting Professor at the NTT Basic Research Laboratories during the summer of 1990. His current appointment is as director of the ASU Center for Solid State Electronics Research.

Dr Thornton’s group at ASU has pioneered the development of SOI MESFETs for low power mixed-signal circuit applications. The ASU device process flow was first adapted for use at the SPAWAR Systems Center SOI CMOS foundry, followed by a demonstration using the Honeywell MOI-5 foundry. In 2000 Thornton founded SJT Micropower Inc., to commercialize the IP developed in his laboratory at ASU.

Dr. Thornton has worked on research programs funded by many federal agencies, including DARPA, AFRL, AFOSR, DOE, NASA, NSF and ONR. Dr. Thornton has published over 100 papers in refereed journal and conference proceedings. He has been issued 4 patents with one more pending, related to the application and manufacturing of SOI MESFETs and their application to LDO regulators.

Seth J. Wilk Ph.D. (CEO)

Dr. Wilk is an expert in the areas of low noise and small signal measurements along with the design of ultra-low noise transconductance amplifiers. He has considerable experience working with and designing low noise circuits and integrated MEMs devices. He was a graduate of the National Science Foundation’s Ph.D. program Integrated Graduate Education and Research Traineeship (IGERT) in the Biomolecular Nanotechnology program at Arizona State University in 2005.

Dr. Wilk has worked with SJT Micropower since early 2006 to build the business and commercialize patented technologies. His main role is the design and development of circuitries that take advantage of SJT Micropower’s new MESFET technology. In addition to novel circuit design, he has developed a business plan for the company which was subsequently used to secure SBIR funding from Science Foundation Arizona.

His work has helped with the award of over $3M in research grants to further SJT Micropower and he has served as PI for multiple projects for agencies including DARPA, NASA and NIH. Dr. Wilk successfully led the design work as PI for a Phase 1 NIH SBIR (contract #1R43EB007453-01) proposal to design microelectronic circuitries for pacemaker communication and was awarded a Phase 2 (contract # 2R44EB007453-02) to bring the technology to a commercialization stage. He has also led a Phase 1 NASA SBIR (X1.03-9811) which has been submitted as a Phase 2 proposal in July 2010. In addition, a Phase 2 DARPA STTR award was recently made with Dr. Wilk as PI. Dr. Wilk has been able to help successfully take the initial MESFET technology and further it to product prototypes.

William Lepkowski, Ph.D. (Research and Senior Engineer)

Dr. Lepkowski received his M.S. and Ph.D. in electrical engineering from Arizona State University in 2008 and 2010, respectively. He has worked as a circuit design engineer for SJT Micropower since 2007. His research focuses on optimizing MESFET device structures for linear and switching regulators and high voltage analog circuits. He also has extensive experience with MESFET layout, modeling and characterization. As part of the MESFET research group at ASU, Dr. Lepkowski has been responsible for the day-to-day management.