RF Micropower - Introducing Scaled RF Power Devices
RF Micropower has developed our technology at several large commercial foundries and we are offering select licensing opportunities.
Currently available at multiple technology nodes.
Innovative fundamental building block for semiconductors
Patented disruptive technology
Please contact us for more information.
Demonstration DFN Packaged MESFETs - RF PA and Switching Applications
RF Micropower now has DFN packaged devices demonstrating the technology.
The devices used a scaled 45nm process and offer saturated output powers up to 30dBm.
Key Technology Enablers
RF Micropower has developed and characterized a high voltage (>20V) transistor that can operate at several Watts of power and has high cutoff frequency for RF wireless technologies and cutting edge power regulation.
The devices takes advantage of highly scaled SOI CMOS processes allowing a small form factor and reduced fabrication costs. The device is also radiation tolerant for HiRel Applications.
We have demonstrated it down to 32nm with no changes to the process flow (no additional cost at the foundry) and are currently scaling it towards smaller technology nodes.
JOIN US AT RWW 2014 - Jan 29-22
We will present RF power amplifiers fabricated on 32nm SOI CMOS.
NASA Phase 2E
Parent company SJT Micropower Inc. has been awarded Phase 2E commercialization funding by NASA.
IEEE Microwave Theory and Wireless Component Letters We recently had our 32dBm power amplifier research accepted for publication by the MTT society.